Methods and apparatuses to form self-aligned caps

ABSTRACT

At least one conductive line in a dielectric layer over a substrate is recessed to form a channel. The channel is self-aligned to the conductive line. The channel can be formed by etching the conductive line to a predetermined depth using a chemistry comprising an inhibitor to provide uniformity of etching independent of a crystallographic orientation. A capping layer to prevent electromigration is deposited on the recessed conductive line in the channel. The channel is configured to contain the capping layer within the width of the conductive line.

CROSS-REFERENCE TO RELATED APPLICATIONS

This patent application is a U.S. National Phase application under 35U.S.C.§371 of International Application No. PCT/US2011/059453, filedNov. 4, 2011, entitled “METHODS AND APPARATUSES TO FORM SELF-ALIGNEDCAPS”.

FIELD

Embodiments of the present invention relate to the field of electronicdevice manufacturing, and in particular, to forming interconnectstructures.

BACKGROUND

As the feature size of electronic devices shrinks, reliability ofinterconnects becomes critical to integrated circuit performance.Generally, electromigration refers to the transport of material causedby the movement of the ions in a conductor due to the momentum transferbetween conducting electrons and diffusing metal atoms. The effect isespecially important in applications where high current densities areused, for example, in microelectronics structures involving logicdevices. Typically, a metal capping technology is used to preventelectromigration.

FIG. 1A is a cross-sectional view of a typical interconnect structurehaving metal electromigration caps. As shown in FIG. 1A, metalinterconnect lines, for example lines 103 and 104, formed on adielectric substrate 101 are originally spaced apart at a line spacing105. The electromigration caps, for example, caps 111-113, can be grownon the respective interconnect lines above a flat surface of thesubstrate using electroless plating. Generally, the growth of theelectromigration caps on the interconnect lines is isotropic. Theelectromigration cap can grow on the interconnect metal line verticallyas well as laterally above the substrate. The lateral growth of themetal electromigration caps may generate overhang structures, forexample, an overhang 109 that protrude over the substrate 101 outsidethe width of the interconnect lines. As shown in FIG. 1A, the lateralgrowth of the metal caps reduces a line-to-line spacing from spacing 105to spacing 107.

Typically, the size of the overhang 109, is about 50% of the capthickness. For example, if the two neighboring metal caps have thethickness of about 10 nanometers (“nm”), the total size of theiroverhangs can be about 2×5 nm. As such, the line-to-line spacing can bereduced, for example, by a factor of two from about 20 (nm) to about 10nm.

FIG. 1B is a top view of a typical interconnect structure having metalelectromigration caps electrolessly grown over a flat surface ofsubstrate 121 having interconnect lines, such as an interconnect line123. As shown in FIG. 1B, the lateral growth of the metal caps above thesubstrate increases the line edge roughness (“LER”) and reducesline-to-line spacing. As shown in FIG. 1B, the line-to-line spacing, forexample, a line-to-line spacing 125, varies uncontrollably. Both theincreased LER and reduced line-to-line spacing negatively impact on thereliability of the interconnect structures, increase the risk of currentshorting that may lead to the failure of the entire integrated circuitdevice.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention is illustrated by way of example and notlimitation in the figures of the accompanying drawings, in which likereferences indicate similar elements, in which:

FIG. 1A is a cross-sectional view of a typical interconnect structurehaving metal electromigration caps.

FIG. 1B is a top view of a typical interconnect structure having metalelectromigration caps.

FIG. 2A shows a cross-sectional view of a substrate to fabricate aninterconnect structure according to one embodiment of the invention.

FIG. 2B is a view similar to FIG. 2A, after a dielectric layer is formedover the substrate according to one embodiment of the invention.

FIG. 2C is a view similar to FIG. 2B, after a photoresist layer isdeposited over the dielectric layer to form one or more openings in thedielectric layer according to one embodiment of the invention.

FIG. 2D is a view similar to FIG. 2C, after one or more openings areformed in the dielectric layer according to one embodiment of theinvention.

FIG. 2E is a view similar to FIG. 2D, after a conductive layer isdeposited over the dielectric layer according to one embodiment of theinvention.

FIG. 2F is a view similar to FIG. 2E, after portions of conductive layerand the base layer are removed from the top surface of the dielectriclayer outside the openings to form patterned conductive lines accordingto one embodiment of the invention.

FIG. 2G is a view similar to FIG. 2F, after conductive lines in adielectric layer over a substrate are recessed according to oneembodiment of the invention.

FIG. 2H is a view similar to FIG. 2G, after capping layers areselectively deposited onto the respective recessed conductive lines inthe channels to prevent electromigration according to one embodiment ofthe invention.

FIG. 3A is a three-dimensional view 300 of an interconnect structureafter recessing the conductive lines in a dielectric layer over asubstrate according to one embodiment of the invention.

FIG. 3B is a view 310 similar to FIG. 3A, after capping layers aredeposited into the respective channels formed by the recessed conductivelines according to one embodiment of the invention.

FIG. 4 is a top view of an interconnect structure 400 having cappinglayers selectively deposited within channels formed by the recessedconductive lines in a dielectric layer over a substrate according to oneembodiment of the invention.

FIG. 5 shows a block diagram of an exemplary embodiment of a dataprocessing system.

DETAILED DESCRIPTION OF THE PRESENT INVENTION

In the following description, numerous specific details, such asspecific materials, dimensions of the elements, etc. are set forth inorder to provide thorough understanding of one or more of theembodiments of the present invention. It will be apparent, however, toone of ordinary skill in the art that the one or more embodiments of thepresent invention may be practiced without these specific details. Inother instances, semiconductor fabrication processes, techniques,materials, equipment, etc., have not been described in great details toavoid unnecessarily obscuring of this description. Those of ordinaryskill in the art, with the included description, will be able toimplement appropriate functionality without undue experimentation.

While certain exemplary embodiments of the invention are described andshown in the accompanying drawings, it is to be understood that suchembodiments are merely illustrative and not restrictive of the currentinvention, and that this invention is not restricted to the specificconstructions and arrangements shown and described because modificationsmay occur to those ordinarily skilled in the art.

Reference throughout the specification to “one embodiment”, “anotherembodiment”, or “an embodiment” means that a particular feature,structure, or characteristic described in connection with the embodimentis included in at least one embodiment of the present invention. Thus,the appearance of the phrases “in one embodiment” or “for an embodiment”in various places throughout the specification are not necessarily allreferring to the same embodiment. Furthermore, the particular features,structures, or characteristics may be combined in any suitable manner inone or more embodiments.

Moreover, inventive aspects lie in less than all the features of asingle disclosed embodiment. Thus, the claims following the DetailedDescription are hereby expressly incorporated into this DetailedDescription, with each claim standing on its own as a separateembodiment of this invention. While the invention has been described interms of several embodiments, those skilled in the art will recognizethat the invention is not limited to the embodiments described, but canbe practiced with modification and alteration within the spirit andscope of the appended claims. The description is thus to be regarded asillustrative rather than limiting.

Methods and apparatuses to control a line edge roughness (“LER”) andline-to-line spacing in deposition of self-aligned metal caps aredescribed herein. At least one conductive line is recessed to form achannel in a dielectric layer over a substrate. A capping layer toprevent electromigration is deposited on the recessed conductive line inthe channel. The channel is self-aligned to the conductive line. Thechannel is configured to contain the capping layer within the width ofthe conductive line. That is, the interconnect line is recessed tocontain the cap growth within a channel self aligned to the interconnectline. The channel can be formed by etching the conductive line to apredetermined depth using a chemistry comprising an inhibitor to provideuniformity of etching independent of a crystallographic orientation, asdescribed in further detail below. Methods and apparatuses describedherein can be used to control the increase in LER associated withselectively deposited electromigration caps, for example, electrolesscobalt caps. That is, an increase in LER and reduction in line-to-linespacing typically associated with the electromigration caps selectivelydeposited on the metal interconnect lines can be prevented by containingan electroless cap within a recess that is self-aligned to aninterconnect line. Eliminating an increase in LER and preventing fromreducing of the line-to-line spacing can decrease the risk of failureand increase the manufacturing yield of the electronic devices havingreduced (e.g., nanometer scale) dimensions. The electronic devices canbe, for example, computer system architecture devices, e.g.,transistors, memories, logic devices, and any other integrated circuitand microelectronic devices.

FIG. 2A shows a cross-sectional view 200 of a substrate to fabricate aninterconnect structure according to one embodiment of the invention. Inone embodiment, substrate 201 includes a monocrystalline silicon. In oneembodiment, substrate 201 includes a silicon-on-insulator (“SOI”). Foralternate embodiments, substrate may comprise compound semiconductors,e.g., indium phosphide, gallium arsenide, gallium nitride, silicongermanium, and silicon carbide. In another embodiment, substrate 201 mayinclude e.g., glass, and quartz. Substrate 201 may include one or moremetallization layers of integrated circuits having active and passivedevices, e.g., transistors, switches, optoelectronic devices,capacitors, resistors, interconnects (not shown). The one or moremetallization layers of integrated circuits of substrate 201 may beseparated from adjacent metallization layers by a dielectric material(not shown), e.g., interlayer dielectric. The adjacent metallizationlayers may be electrically interconnected by vias (not shown).

FIG. 2B is a view similar to FIG. 2A, after a dielectric layer 203 isformed over the substrate 201 according to one embodiment of theinvention. In one embodiment, dielectric layer 203 is an interlayerdielectric (“ILD”). In one embodiment, dielectric layer 203 is a low-kdielectric, e.g., silicon dioxide, silicon oxide, and carbon doped oxide(“CDO”), or any combination thereof. In one embodiment, Dielectric layer203 includes a nitride, oxide, a polymer, phosphosilicate glass,fluorosilicate (“SiOF”) glass, organosilicate glass (“SiOCH”), or anycombination thereof. In one embodiment, dielectric layer 203 includes aspin-on low-k dielectric material. In one embodiment, dielectric layer203 is silicon dioxide. In another embodiment, dielectric layer 203 issilicon nitride. dielectric layer 203 may be deposited using anysuitable deposition technique. In one embodiment, dielectric layer 203may be deposited using blanket deposition technique, for example,chemical vapor deposition (“CVD”), sputtering, spin-on, or another thinfilm deposition technique. In one embodiment, dielectric layer 203 isdeposited to the thickness in the approximate range of 50 nm to 2 μm.

FIG. 2C is a view similar to FIG. 2B, after a photoresist layer 204 isdeposited over dielectric layer 203 to form one or more openings indielectric layer 203 according to one embodiment of the invention. Inone embodiment, photoresist layer 204 is deposited on a hard mask layer202 formed on dielectric layer 203, as shown in FIG. 2C. In anotherembodiment, photoresist layer 204 is deposited directly onto dielectriclayer 203. As shown in FIG. 2C, photoresist layer 204 and hard masklayer 202 are patterned and etched to form openings, such as an opening220. Patterning and etching of the photoresist and hard mask is known toone of ordinary skill in the art of microelectronic devicemanufacturing. Patterning and etching of the photoresist may beperformed using one of the techniques known to one of ordinary skill inthe art of microelectronic device manufacturing. The technique mayinclude masking the photoresist layer, exposing the masked layer tolight, and then developing the unexposed portions to remove the portionsof the photoresist layer that are exposed to light to form a window inthe photoresist layer. In one embodiment, the process of exposing tolight and removing the photoresist layer may be performed in a plasmareactor. The opening in hard mask 202 may be etched to expose a portionof dielectric layer 203 using a dry etching, e.g., reactive ion etching(“RIE”), wet etching, or any combination thereof techniques.

FIG. 2D is a view similar to FIG. 2C, after one or more openings, suchas an opening 206, are formed in dielectric layer 203 according to oneembodiment of the invention. In one embodiment, the openings are, suchas opening 206, is etched through openings in hard mask 203, such asopening 220. In another embodiment, the openings are formed by etchingthe dielectric layer through the openings in patterned photoresist 204deposited directly onto dielectric layer 203. In one embodiment, theopenings in the dielectric layer 203, for example, trenches, are formedusing an anisotropic dry etching, e.g., plasma etching. In anotherembodiment, the openings in the dielectric layer 203 are formed usingdry etching, wet etching, or a combination thereof techniques known toone of ordinary skill in the art of microelectronic devicemanufacturing. In one embodiment, the openings in dielectric layer 203has the width in the approximate range of 0.005 microns (“μm”) to 5 μm,and the depth in the approximate range of 0.005 μm to 10 μm. In oneembodiment, the size of openings is determined by the size of aconductive line formed within ILD 203 later on in the process.

After forming the openings, such as opening 206, the photoresist andhard mask are removed. Removing of the photoresist and the hard maskfrom dielectric layer 203 is known to one of ordinary skill in the artof microelectronic device manufacturing. In one embodiment, thephotoresist and hard mask may be removed using a chemical technique,mechanical technique, or both.

FIG. 2E is a view similar to FIG. 2D, after a conductive layer 205 isdeposited over dielectric layer 203 according to one embodiment of theinvention. As shown in FIG. 2E, forming of the conductive layer 205involves filling the one or more openings in dielectric layer 203 with aconductive material to form one or more conductive lines. In oneembodiment, a base layer (not shown) is first deposited on dielectriclayer 203 covering the internal sidewalls and bottom of the openings,and then a conductive layer 205 is deposited on the base layer. In oneembodiment, the base layer includes a conductive seed layer (not shown)deposited on a conductive barrier layer (not shown). The seed layer caninclude copper, and the conductive barrier layer can include aluminum,titanium, tantalum, tantalum nitride, and the like metals. Theconductive barrier layer can be used to prevent diffusion of theconductive material from the seed layer, e.g., copper, into ILD 203.Additionally, the conductive barrier layer can be used to provideadhesion for the seed layer (e.g., copper). In one embodiment, to formthe base layer, the conductive barrier layer is deposited onto thedielectric layer 203 covering the sidewalls and bottom of the opening,and then the seed layer is deposited on the conductive barrier layer. Inanother embodiment, the conductive base layer includes the seed layerthat is directly deposited onto dielectric layer 203 covering thesidewalls and bottom of the openings. Each of the conductive barrierlayer and seed layer may be deposited using any thin film depositiontechnique known to one of ordinary skill in the art of semiconductormanufacturing, e.g., by sputtering, blanket deposition, and the like. Inone embodiment, each of the conductive barrier layer and the seed layerhas the thickness in the approximate range of 1 to 100 nm. In oneembodiment, the barrier layer may be a thin dielectric that has beenetched to establish conductivity to the metal layer below. In oneembodiment, the barrier layer may be omitted altogether and appropriatedoping of the copper line may be used to make a “self-forming barrier”.

Conductive layer 205 fills the openings, such as an opening 206, andcovers portions of the base layer (not shown) outside of the openingsthat are on top of dielectric layer 203. In one embodiment, conductivelayer 205 e.g., copper, is deposited onto the seed layer of base layerof copper, by an electroplating process. In one embodiment, conductivelayer 205 is deposited into the openings using a damascene process thatis known to one of ordinary skill in the art of microelectronic devicemanufacturing. In one embodiment, conductive layer 205 is deposited ontothe seed layer using one of selective deposition techniques known to oneof ordinary skill in the art of semiconductor manufacturing, e.g.,electroplating, electroless plating, and the like. In one embodiment,the choice of a material for conductive layer 205 determines the choiceof a material for the seed layer. For example, if the material forconductive layer 205 includes copper, the material for the seed layeralso includes copper. In one embodiment, conductive layer 205 includese.g., copper (Cu), ruthenium (Ru), nickel (Ni), cobalt (Co), chromium(Cr), iron (Fe), manganese (Mn), titanium (Ti), aluminum (Al), hafnium(Hf), tantalum (Ta), tungsten (W), Vanadium (V), Molybdenum (Mo),palladium (Pd), gold (Au), silver (Au), platinum Pt, or any combinationthereof.

FIG. 2F is a view similar to FIG. 2E, after portions of conductive layer205 and the base layer are removed from the top surface of dielectriclayer 203 outside the openings to form patterned conductive lines, suchas a conductive line 208 according to one embodiment of the invention.Portions of conductive layer 205 may be removed chemically, e.g., usingetching, mechanically, e.g., using polishing, or by a combination ofthereof techniques, e.g., using a chemical-mechanical polishing (“CMP”)technique known to one of ordinary skill in the art of microelectronicdevice manufacturing. In one embodiment, one or more patternedconductive lines are formed within dielectric layer 203 using methodsdescribed above. In another embodiment, the conductive lines are formedby patterning and etching of the conductive layer deposited on the topsurface of dielectric layer 203. Patterning and etching of theconductive layer deposited on the top surface of the dielectric layer203 is known to one of ordinary skill in the art of microelectronicdevice manufacturing. In one embodiment, the thickness of the conductiveline, for example, a thickness 211 is in the approximate range of 0.015μm to 1 μm. In one embodiment, the width of the conductive line, forexample, a width 209 is in the approximate range of 5 nm to about 500nm. In one embodiment, the spacing between the conductive lines, forexample, a spacing 207, is from about 5 nm to about 500 nm. In oneembodiment, the spacing between the conductive lines is from about 2 nmto about 100 nm.

FIG. 2G is a view similar to FIG. 2F, after the conductive lines, forexample, a conductive line 208, in a dielectric layer over a substrateare recessed according to one embodiment of the invention. As shown inFIG. 2G, channels, such as a channel 212, are formed in dielectric layer203. As shown in FIG. 2G, channels, such as channel 212, have sidewallsmade of dielectric layer 203, such as sidewalls 214 and 216, and abottom made of a respective conductive line, such as a bottom 218 madeof conductive line 208.

In one embodiment, the channel has depth, such as a depth 213 from about5 nm to about 50 nm. In one embodiment, the depth of the channel is fromabout 2 nm to about 20 nm. In one embodiment, the channel has depth thatis from about 10% to about 50% of the thickness of the conductive line,such as a thickness 211 shown in FIG. 2F. In one embodiment, theconductive lines are recessed to the depth, which is determined based onthe thickness of a capping layer, as described in further detail below.

FIG. 3A is a three-dimensional view 300 of an interconnect structureafter recessing the conductive lines, such as a conductive line 305 anda conductive line 304, in a dielectric layer 303 over a substrate 301according to one embodiment of the invention. Substrate 301, dielectriclayer 303, and the conductive lines 305 and 304, can be, for example,any of the respective substrates, dielectric layers, and conductivelines, as described above. As shown in FIG. 3A, channels, such as achannel 302 and a channel 307, are formed in a dielectric layer 303 oversubstrate 301 by recessing the conductive lines. As shown in FIG. 3A,the channels are self-aligned to the respective conductive lines. Forexample, channel 307 is self-aligned to conductive line 305 and channel302 is self-aligned to conductive line 304. As shown in FIG. 3A, thelength of the channel, e.g., a length 315 is along the length of theconductive line, and the width of the channel, e.g., a width 307 isalong the width of the conductive line. In one embodiment, the length ofthe channel is substantially longer that the width of the channel. Inone embodiment, the width of the channel is less than 100 nm, and thelength of the channel is at least 500 nm. In one embodiment, the widthof the channel is from about 5 nm to about 500 nm, and the length of thechannel is from about a few hundred nanometers to about a few hundredmicrons. As shown in FIG. 3A, the conductive lines, such as conductivelines 305 and 304 are separated by a distance, such as a spacing 309. Inone embodiment, the spacing between the conductive lines, such as lines305 and 304 is from about 5 nm to about 500 nm. In one embodiment, thespacing between the conductive lines, such as lines 305 and 304 is fromabout 2 nm to about 100 nm.

In one embodiment, recessing the conductive lines, such as line 208,lines 304 and 305, involves wet etching the conductive lines uniformlyindependent of a crystallographic orientation using a chemistrycontaining an etchant, an oxidizer, an inhibitor, and a solvent. Thatis, adding an inhibitor and a solvent to the etchant provides uniformetching of the conductive material independent of a crystallographicorientation, by forming, during etching, a passivation layer (not shown)on the conductive material. The wet etch chemistry containing anetchant, an oxidizer, an inhibitor, and solvent provides control overthe depth of the etching of the conductive line, so that only a portion(e.g., 5% to 50%) of the conductive line can be recessed.

In one embodiment, the chemistry to wet etch the conductive lines toprovide a channel that is free from a pattern dependence and acrystallographic preference comprises between about 1% to about 40% bymass of an etchant, between about 1% to about 10% by mass of anoxidizer, and between about 0.1% to about 1% by mass of an inhibitor,and between about 1 to about 60% by mass of an organic solvent. In oneembodiment, the chemistry to wet etch the conductive lines comprises anetchant from about 0.1% to about 70% by mass (depending on the etch rateof the etchant), an oxidizer from about 0.1% to about 10% by mass(depending on the strength of the oxidizer), an inhibitor from about 50parts per million (ppm) to about 1% by mass; and a solvent between about1 to about 60% by mass.

In one embodiment, the chemistry to etch the conductive lines caninclude an etchant, for example, a glycine, anethylenediaminetetraacetic acid, an alpha-amino acid, a polycarboxylicacid, or a combination thereof; the oxidizer, for example, a peroxide,an ozone, a permanganate, a chromate, a perborate, a hypohalite, or acombination thereof, an inhibitor, for example, an azole, an amine, anamino acid, a phosphate, a phosphonate, or a combination thereof, and asolvent. The solvent can be an aqueous system (preferred), e.g., water,or an organic solvent. The examples of an organic solvents are propylenecarbonate, sulfolane, glycol ethers, methylene chloride, and the like.

For example, regarding the etchant in the chemistry to etch copperconductive lines, Cu metal is typically in a zero oxidation state. Inorder to etch copper, the copper needs to be oxidized into a 0+noxidation state where ‘n’ can be any of 1, 2, 3 or 4. Typically, 1^(st)state and 2^(d) state are more common oxidation states of copper. Forany molecule to act as an etchant, it needs to be able to bind copper inone of its oxidation states 1, 2, 3 or 4. This binding typically occursthrough the use of group 15 (Nitrogen family), group 16 (Oxygen family)or group 17 (Halogen family) atoms in a molecule. In one embodiment, theetchant to etch copper conductive lines is an organic etchant, forexample, any of glycine, ethylenediaminetetraacetic, alpha-amino acids,polycarboxylic acids (for example, citric acid that is a tricarboxylicacid), oxalic and malonic acids.

For example, an oxidizer in the chemistry to etch copper conductivelines is used to change the copper oxidation state from an insolublecopper metal to a soluble copper ion. The oxidizer can be chosen fromany of the oxidizers, for example, any of peroxides (e.g., hydrogenperoxide), ozone, permanganates, chromates, perborates and hypohalites,and the like.

For example, to etch the copper constituting the current carrying linein a uniform and non-crystallographic orientation, it is important toadd an inhibitor to the chemistry. The role of an inhibitor is to form apassivation layer (a polymeric compound formed from the molecules of theinhibitor binding copper in a specific and periodic manner). Theformation of this passivation layer during the controlled etch of copperis critical to ensure uniformity of etching and preventing etchingattacks (e.g., forming voids) along crystallographic (e.g., grain)boundaries. For example, any inhibitor that is not decomposed in thechosen oxidizer and etchant combination may be used in the chemistry toetch copper conductive lines. The classes of inhibitors are known to oneof ordinary skill in the art of electronic device manufacturing. Forexample, any of organic inhibitors including azoles, amines, aminoacids, phosphates and phosphonates can be used in the chemistry to etchthe copper conductive lines.

In another embodiment, the conductive copper lines are recessed by wetetching using a chemistry comprising a citric acid and peroxide. Achemistry comprising citric acid and peroxide, however, typically hashigh etching rate that can be difficult to control. Additionally, anetching rate of the chemistry comprising citric acid and peroxidedepends on a crystallographic orientation that may produce rough etchedsurface. Addition of a corrosion inhibitor, for example, benzotriazole(“BTA”) to the chemistry, and dilution of the citric acid and peroxidein organic solvent can slow down the etching rate dramatically andeliminate the crystallographic nature of the etch, such as etching thevoids in Cu along the grain boundaries producing a smooth surface.

In one embodiment, the conductive lines are recessed by wet etching thatinvolves any of spraying, and pouring the etching chemistry onto theconductive lines. In one embodiment, the conductive lines are recessedby wet etching that involves immersing the conductive lines into theetching chemistry solution. In one embodiment, the conductive lines arerecessed by wet etching at a temperature from about 15° C. to about 50°C. for a predetermined time. In at least some embodiments, theconductive lines are recessed by dry etching, e.g., plasma etching.

FIG. 2H is a view similar to FIG. 2G, after the capping layers areselectively deposited onto the respective recessed conductive lines inthe channels to prevent electromigration according to one embodiment ofthe invention. The conductive lines etched using the chemistry asdescribed above, have a smooth uniform top surface to adhere the cappinglayer. As shown in FIG. 2H, a capping layer 215 is deposited ontorecessed conductive line 208 within channel 212. In one embodiment, thechannel, such as channel 212, is configured to contain a capping layerwithin the width of the conductive line, e.g., width 209 shown in FIG.2F. That is, the recessed conductive line creates a channel whichcontains the growth of the capping layer within the channel thatmitigates the reduction in line-to-line spacing and increase in LER. Asshown in FIG. 2H the capping layer 215 is located on the conductive line208 within the sidewalls of the channel 212. In one embodiment, thecapping layer is deposited on the recessed conductive line by anelectroless deposition (e.g., plating), a chemical vapor deposition(“CVD”), a physical vapor deposition (“PVD”), or any other selectivedeposition techniques known to one of ordinary skill in the art ofelectronic device manufacturing. In one embodiment, a conductive line,such as line 208, comprises a first metal, and the capping layercomprises a second metal other than the first metal to preventelectromigration of the first metal from the conductive line. In oneembodiment, the metal for the capping layer is heavier than the metalfor the conductive line to prevent electromigration.

For example, the conductive line can be made of any of the metalsincluding copper, aluminum. In one embodiment, the capping layer, suchas capping layer 215, is made of cobalt (“Co”), cobalt electrolessalloys, e.g., CoBP, CoWBP, CoWP, CoWB, CoWP, or a combination thereof.In another embodiment, a capping layer, such as capping layer 215, ismade of nickel (“Ni”), Ni electroless alloys, e.g., NiBP, NiWBP, NiWP,NiWB, NiWP, or a combination thereof. In another embodiment, a cappinglayer, such as capping layer 215, is made of platinum (“Pt”) groupmetals, for example, Pt, Pd, Ru, Ir, Rh as pure elements or alloys. Thetypical alloy elements for Pt group metals are W, B, P. In yet anotherembodiment, a capping layer, such as capping layer 215, is made ofrefractory metals, for example, Ta, W, Mo, or a combination thereof.

In one embodiment, the Co capping layer is deposited within a channelonto the recessed Cu conductive layer. In one embodiment, Ni cappinglayer is deposited within a channel onto the recessed Cu conductivelayer. In one embodiment, refractory metal capping layer is depositedwithin a channel onto the recessed Cu conductive layer.

In one embodiment, the capping layers comprising a Pt group metal, Co,Ni, or a combination thereof, are deposited onto the conductive layers,e.g., copper, aluminum, using any of an electroless deposition, and avapor phase deposition, e.g., CVD. In one embodiment, the capping layersincluding refractory metals are deposited onto the conductive layers,e.g., copper, aluminum, using any of a CVD and PVD techniques known toone of ordinary skill in the art of electronic device manufacturing. Inone embodiment, the thickness of the capping layer, e.g., a thickness221, is from about 2 nm to about 50 nm In one embodiment, the thicknessof the capping metal layer is sufficient to prevent electromigrationfrom the underlying conductive layer. In one embodiment, the cappinglayer has the thickness that is no greater than the depth of the channelwithin which the capping layer is deposited.

FIG. 3B is a view 310 similar to FIG. 3A, after capping layers aredeposited into the respective channels formed by the recessed conductivelines according to one embodiment of the invention. As shown in FIG. 3B,capping layers, such as a capping layer 311 and 319 are selectivelydeposited into respective channels, such as channel 302 and channel 307,as described above. As shown in FIG. 3A, the capping layers arecontained within their respective channels. As shown in FIG. 3B, thecapping layer 319 is separated from capping layer 311 by spacing 309. Inone embodiment, the spacing between conductive lines 305 and 304 and thespacing between the capping layers 319 and 311 is the same.

FIG. 4 is a top view of an interconnect structure 400 having cappinglayers selectively deposited within channels formed by the recessedconductive lines in a dielectric layer 401 over a substrate according toone embodiment of the invention. As shown in FIG. 4, the LER of theinterconnect lines, such as an interconnect line 403 is substantiallyreduced, the edges of the interconnect lines are smooth, and aline-to-line spacing, such as a line-to-line spacing 405 is increasedand maintained between the lines. In one embodiment, the line-to-linespacing is increased by 2× cap thickness. This can result in ratherdramatic decreases in electric field and time to dielectric breakdown,especially, for a future technology node having 20 nm lines and 20 nmspaces. The minimum cap thickness known to work today is 5 nm. Thismeans that with a conventional approach the line-line space would be 10nm instead of the 20 nm drawn on a mask. Furthermore, currently, thesize of the protrusions in the overhang tends to be about 50% of the capthickness. For a typical cap thickness of 5-10 nm using methodsdescribed above LER can be decreased by 3-5 nm independent of linewidth. For a future 20 nm technology node, decrease in LER by 3-5 nm canresult in 15-20% increase in line-to-line spacing of an interconnectstructure.

FIG. 5 shows a block diagram of an exemplary embodiment of a dataprocessing system 500 having one or more electronic devices, e.g.,transistors, memories, such as a memory 504, and a memory 518,processing logic devices, such a processing logic device 526, and anyother integrated circuit and microelectronic devices that are builtusing methods described herein. As shown in FIG. 5, data processingsystem 500 includes a processor 502 having processing logic 526. In atleast some embodiments, processing logic 526 contains at least oneconductive line in a dielectric layer over a substrate, a channel in thedielectric layer over the one conductive line; and a capping layer onthe at least one conductive line in the channel to preventelectromigration, as described herein. In at least some embodiments,each of the memories 504 and 518 contains at least one conductive linein a dielectric layer over a substrate, a channel in the dielectriclayer over the one conductive line; and a capping layer on the at leastone conductive line in the channel to prevent electromigration, asdescribed herein

In alternative embodiments, the data processing system may be connected(e.g., networked) to other machines in a Local Area Network (LAN), anintranet, an extranet, or the Internet. The data processing system mayoperate in the capacity of a server or a client machine in aclient-server network environment, or as a peer machine in apeer-to-peer (or distributed) network environment. The data processingsystem may be a personal computer (PC), a tablet PC, a set-top box(STB), a Personal Digital Assistant (PDA), a cellular telephone, a webappliance, a server, a network router, switch or bridge, or any machinecapable of executing a set of instructions (sequential or otherwise)that specify actions to be taken by that data processing system.Further, while only a single data processing system is illustrated, theterm “data processing system” shall also be taken to include anycollection of data processing systems that individually or jointlyexecute a set (or multiple sets) of instructions to perform any one ormore of the methodologies described herein.

The exemplary data processing system 500 includes a processor 502, amain memory 504 (e.g., read-only memory (ROM), flash memory, dynamicrandom access memory (DRAM) such as synchronous DRAM (SDRAM) or RambusDRAM (RDRAM), etc.), a static memory 506 (e.g., flash memory, staticrandom access memory (SRAM), etc.), and a secondary memory 518 (e.g., adata storage device), which communicate with each other via a bus 530.

Processor 502 represents one or more general-purpose processing devicessuch as a microprocessor, central processing unit, or the like. Moreparticularly, the processor 502 may be a complex instruction setcomputing (CISC) microprocessor, reduced instruction set computing(RISC) microprocessor, very long instruction word (VLIW) microprocessor,processor implementing other instruction sets, or processorsimplementing a combination of instruction sets. Processor 502 may alsobe one or more special-purpose processing devices such as an applicationspecific integrated circuit (ASIC), a field programmable gate array(FPGA), a digital signal processor (DSP), network processor, or thelike. Processor 502 is configured to execute the processing logic 526for performing the operations described herein.

The computer system 500 may further include a network interface device508. The computer system 500 also may include a video display unit 510(e.g., a liquid crystal display (LCD), a light emitting diode display(LED), or a cathode ray tube (CRT)), an alphanumeric input device 512(e.g., a keyboard), a cursor control device 514 (e.g., a mouse), and asignal generation device 516 (e.g., a speaker).

The secondary memory 518 may include a machine-accessible storage medium(or more specifically a computer-readable storage medium) 531 on whichis stored one or more sets of instructions (e.g., software 522)embodying any one or more of the methodologies or functions describedherein. The software 522 may also reside, completely or at leastpartially, within the main memory 504 and/or within the processor 502during execution thereof by the computer system 500, the main memory 504and the processor 502 also constituting machine-readable storage media.The software 522 may further be transmitted or received over a network520 via the network interface device 508.

While the machine-accessible storage medium 531 is shown in an exemplaryembodiment to be a single medium, the term “machine-readable storagemedium” should be taken to include a single medium or multiple media(e.g., a centralized or distributed database, and/or associated cachesand servers) that store the one or more sets of instructions. The term“machine-readable storage medium” shall also be taken to include anymedium that is capable of storing or encoding a set of instructions forexecution by the machine and that cause the machine to perform any oneor more of the methodologies of the present invention. The term“machine-readable storage medium” shall accordingly be taken to include,but not be limited to, solid-state memories, and optical and magneticmedia.

In alternative embodiments, FIG. 5 illustrates a computing device 500.The computing device 500 houses a board 530. The board may include anumber of components, including but not limited to a processor 502 andat least one communication chip 508. The processor 502 is physically andelectrically coupled to the board 530. In some implementations the atleast one communication chip 508 is also physically and electricallycoupled to the board 530. In further implementations, the communicationchip 508 is integrated within the processor 502.

Depending on its applications, computing device 500 may include othercomponents that may or may not be physically and electrically coupled tothe board 530. These other components include, but are not limited to,volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flashmemory, a graphics processor, a digital signal processor, a cryptoprocessor, a chipset, an antenna, a display, a touchscreen display, atouchscreen controller, a battery, an audio codec, a video codec, apower amplifier, a global positioning system (GPS) device, a compass, anaccelerometer, a gyroscope, a speaker, a camera, and a mass storagedevice (such as hard disk drive, a solid state drive, a compact disk(CD) drive, a digital versatile disk (DVD) drive, and so forth).

The communication chip 508 enables wireless communications for thetransfer of data to and from the computing device 500. The term“wireless” and its derivatives may be used to describe circuits,devices, systems, methods, techniques, communications channels, etc.,that may communicate data through the use of modulated electromagneticradiation through a non-solid medium. The term does not imply that theassociated devices do not contain any wires, although in someembodiments they might not. The communication chip 508 may implement anyof a number of wireless standards or protocols, including but notlimited to Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE802.20, long term evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE,GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, derivatives thereof, as well asany other wireless protocols that are designated as 3G, 4G, 5G, andbeyond. The computing device 500 may include a plurality ofcommunication chips 508. For instance, a first communication chip 508may be dedicated to shorter range wireless communications such as Wi-Fiand Bluetooth and a second communication chip 1006 may be dedicated tolonger range wireless communications such as GPS, EDGE, GPRS, CDMA,WiMAX, LTE, Ev-DO, and others.

The processor 502 of the computing device 500 includes an integratedcircuit die packaged within the processor 502. In some implementationsof the invention, the integrated circuit die of the processor includesone or more devices, such as transistors or metal interconnects, thatare formed using methods and apparatuses to control a line edgeroughness and line-to-line spacing in deposition of self-aligned metalcaps as described herein. The term “processor” may refer to any deviceor portion of a device that processes electronic data from registersand/or memory to transform that electronic data into other electronicdata that may be stored in registers and/or memory.

The communication chip 508 also includes an integrated circuit diepackaged within the communication chip 508. In accordance with anotherimplementation of the invention, the integrated circuit die of thecommunication chip includes one or more devices, such as transistors ormetal interconnects, that are formed using methods and apparatuses tocontrol a line edge roughness and line-to-line spacing in deposition ofself-aligned metal caps as described herein.

In further implementations, another component housed within thecomputing device 600 may contain an integrated circuit die that includesone or more devices, such as transistors or metal interconnects, thatare formed using methods and apparatuses to control a line edgeroughness and line-to-line spacing in deposition of self-aligned metalcaps as described herein.

In various implementations, the computing device 500 may be a laptop, anetbook, a notebook, an ultrabook, a smartphone, a tablet, a personaldigital assistant (PDA), an ultra mobile PC, a mobile phone, a desktopcomputer, a server, a printer, a scanner, a monitor, a set-top box, anentertainment control unit, a digital camera, a portable music player,or a digital video recorder. In further implementations, the computingdevice 500 may be any other electronic device that processes data.

In the foregoing specification, embodiments of the invention have beendescribed with reference to specific exemplary embodiments thereof. Itwill be evident that various modifications may be made thereto withoutdeparting from the broader spirit and scope of embodiments of theinvention as set forth in the following claims. The specification anddrawings are, accordingly, to be regarded in an illustrative senserather than a restrictive sense

What is claimed is:
 1. A method to manufacture an electronic device,comprising: recessing at least one conductive line in a dielectric layerover a substrate to form a channel comprising a dielectric sidewallusing a first chemistry comprising between about 0.1% to about 70% bymass of an etchant, between about 0.1% to about 10% by mass of anoxidizer, between about 50 ppm to about 1% by mass of an inhibitor andbetween about 1% to about 60% by mass of a solvent to provide an etchinguniformity independent of a crystallographic orientation; and depositinga capping layer on the recessed conductive line and on the dielectricsidewall of the channel to prevent electromigration.
 2. The method ofclaim 1, wherein the recessing includes forming a passivation layer onthe at least one conductive line during etching using the inhibitor andthe solvent, wherein the passivation layer is to ensure that the atleast one conductive line is etched uniformly independent of acrystallographic orientation.
 3. The method of claim 1, wherein thechannel is self-aligned to the conductive line.
 4. The method of claim1, wherein the at least one conductive line is recessed to a depthdetermined based on a thickness of the capping layer.
 5. The method ofclaim 1, wherein the capping layer is deposited on the recessedconductive line by an electroless plating, a chemical vapor deposition,or a physical vapor deposition.
 6. The method of claim 1, furthercomprising forming a dielectric layer over the substrate; forming atleast one opening in the dielectric layer; and filling the at least oneopening with a conductive material to form the at least one conductiveline.
 7. The method of claim 1, wherein the at least one conductive linecomprises a first metal, and the capping layer comprises a second metalother than the first metal.
 8. A method to control line edge roughness,comprising: etching at least one conductive line in a dielectric layerover a substrate with a first chemistry to a predetermined depth to forma channel comprising a dielectric sidewall self-aligned to the at leastone conductive line, wherein the first chemistry comprises between about0.1% to about 70% by mass of an etchant, between about 0.1% to about 10%by mass of an oxidizer, between about 50 ppm to about 1% by mass of aninhibitor and between about 1% to about 60% by mass of a solvent toprovide uniformity of etching independent of a crystallographicorientation; and depositing a capping layer on the at least oneconductive line and on the dielectric sidewall of the channel.
 9. Themethod of claim 8, wherein the etchant includes a glycine, anethylenediaminetetraacetic acid, an alpha-amino acid, a polycarboxylicacid, or a combination thereof; the oxidizer includes a peroxide, anozone, a permanganate, a chromate, a perborate, a hypohalite, or acombination thereof, the inhibitor includes an azole, an amine, an aminoacid, a phosphate, a phosphonate, or a combination thereof, and thesolvent includes water, propylene carbonate, sulfolane, glycol ethers,methylene chloride, or any combination thereof.
 10. The method of claim8, further comprising depositing the capping layer onto the etchedconductive line in the channel.
 11. The method of claim 8, wherein thedepth is determined based on a thickness of the capping layer.